Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014) | |
Energy Harvesting & Storage | Tuesday Sessions |
Session EH-TuM |
Session: | Solar Cells |
Presenter: | Takeaki Sakurai, University of Tsukuba, Japan |
Authors: | T. Sakurai, University of Tsukuba, Japan S. Wang, University of Tsukuba, Japan T. Miyazawa, University of Tsukuba, Japan H. Xia, University of Tsukuba, Japan W. Fu, University of Tsukuba, Japan K. Akimoto, University of Tsukuba, Japan |
Correspondent: | Click to Email |
Control of electrical properties at organic semiconductor/metal electrode interfaces is one of the significant issues for improving performances of the organic solar cells since it has an influence on carrier extraction and exciton quenching. In small molecule based organic solar cells, bathocuproine (BCP) is used well as a buffer layer between C60 and metal cathode to improve the device efficiency. Lifetime and the stability of the device with BCP buffer layer, however, are not good for the practical application. To obtain the strategies for the development of the effective buffer layer, we have investigated the electronic structures at the interfaces between C60 and a large variety of organic semiconductors by means of synchrotron based in-situ ultraviolet photoelectron spectroscopy. The C60/buffer/Ag heterostructures were formed by depositing buffer materials on Ag and subsequently depositing C60 onto buffer/Ag stack layer in a step-by-step way in a vacuum deposition chamber. A series of perylene derivatives (PTCDA, PTCDI and PTCBI), TCNQ derivatives (TCNQ and F4TCNQ) and pyridine based acceptor molecules (BCP, TPBi and TAZ) were applied as buffer layers. For all buffer/Ag stack structures, the LUMO level of buffer layers almost accords with Fermi level of Ag, that is, electron is easily transferred from the Ag electrode to the buffer layers due to the disappearance of the electron injection barrier. In contrast, the electron injection barrier height between LUMO of C60 and LUMO of buffer materials correlates with the work function of the buffer/Ag stack structures (Φbuff). We conclude that to select a buffer/Ag heterostructure with low work function is important in order to maintain good electric contact near Ag cathode. The detailed physical mechanism about the energy level alignment will be discussed using charge transfer model.