Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)
    Energy Harvesting & Storage Tuesday Sessions
       Session EH-TuM

Paper EH-TuM10
n-type Thin Film WSe2 for use in Homojunction WSe2 Solar Cells

Tuesday, December 9, 2014, 11:00 am, Room Lehua

Session: Solar Cells
Presenter: Natale Ianno, University of Nebraska-Lincoln
Authors: A. Sarkar, University of Nebraska-Lincoln
N.J. Ianno, University of Nebraska-Lincoln
R.J. Soukup, University of Nebraska-Lincoln
Correspondent: Click to Email

Previously we have shown that as-grown p-type thin film WSe2 is an excellent candidate for an earth abundant photovoltaic absorber.1 The vast majority of thin solar cells are heterojunction devices with a wide band gap n-type window layer. Many of the device issues are centered on the heterojunction interface, making a homojunction more desirable. The problem here is growing n-type material in thin film systems. In this work we present the structural, optical, and electrical properties of n-type thin film WSe2 grown via the selenization of sputter deposited copper doped tungsten films. We will show that highly textured films with an optical band gap in range of 1.45 eV, and absorption coefficients greater than 105/cm across the visible spectrum can be easily achieved. In addition we will present Hall Effect and carrier density measurements as a measure of film quality. We employ these results to numerically simulate homojunction solar cells based on this material, where we will show efficiencies greater than 20% are possible.

1. Q. Ma, H. Kyureghian, J. D. Banninga and N. J. Ianno, MRS Proceedings , Volume 1670 , 2014. DOI: http://dx.doi.org/10.1557/opl.2014.477