Ultra Shallow Junctions 2005 (USJ-2005)

8th International Workshop on the Fabrication, Characterization and Modeling
of Ultra Shallow Junctions  in Semiconductors

June 5-8, 2005
Plaza Resort  & Spa
Daytona Beach, Florida, USA
 Program also viewable/downloadable in Adobe pdf format

Conference Sponsors

 

Applied Quantum® X

CAMECA's Shallow Probe LEXFAB-300

Evans Analytical Services

Overview

Mon. Sessions

Tues. Sessions

Wed. Sessions

Exhibits

 Manuscripts

Registration

 

Scope:

This meeting will provide an open forum for the presentation of new ideas in ultra-shallow junction formation and techniques for measurement and modeling of the one- and two-dimensional aspects of ultra-shallow junctions, primarily silicon devices.  We particularly invite device designers, equipment manufacturers, characterization, modeling and TCAD Engineers, to review the current and future needs for shallow junctions, manufacturing tool capabilities as well as recent advancements of the analytical characterization techniques.  The workshop consists of invited review papers, contributed papers, and focused topical discussions. 

 

Hotel Information:

Due to some construction issues at the Plaza Resort and Spa we have moved the sleeping room block next door to The Plaza Ocean Club, 640 N. Atlantic Avenue, Daytona Beach, FL 32118 (http://plazaoceanclub.com/index.cfm). Rooms are still  $94 single or double (plus tax). To make a reservation please call 386-257-1950, 800-874-7420 by May 6, 2005, and request the “AVS (American Vacuum Society)” block. 

**The meeting will still be held at the Plaza Resort and Spa, 600 North Atlantic Ave., Daytona Beach, FL 32118.

 

 

Invited Speakers:

  • Jeffrey C. Gelpey, Mattson Technology Canada, Inc., Vancouver, British Columbia, Canada, “Advanced USJ formation using fRTP”

  • Thomas F. Kelly (with Keith Thompson, David J. Larson, Robert Ulfig), Imago Scientific Instruments Corp., Madison, Wisconsin, USA, “Three-Dimensional Mapping of Dopants in Ultra-Shallow Junctions with a Local Electrode Atom Probe”
     

  • Hal Kennel, Intel Corp., USA, “Activating Shallow Junctions:  Insight from Modeling”

  • Takashi Kuroi, Renesas Technology Corp., Itami, Hyogo, Japan, “Ultra-shallow junction formation for 45 nm node and beyond”
     

  • Damien Lenoble, STMicroelectronics, Crolles, France “Advanced junctions fabrication assisted by plasma doping technique for various integrated ICs applications”

  • Rich Lindsay, Infineon Technologies, “Bridging RTA and sub-melt laser annealing for 45 nm CMOS”

  • Lordes Pelaz, Universidad de Valladolid, Valladolid, Spain, “Atomistic modeling of junction formation in silicon”

  • Wilfried Vandervorst, IMEC, Leuven, Belgium, “Challenges and Solutions for Dopant/Carrier Profiling in the (sub) - 45 nm node”

  • Steve Walther, Varian Semiconductor Equipment Associates, Gloucester, Massachusetts, USA, “Development of plasma-based implant for silicon devices”

 

Organizing Committee of USJ-2005

Technical Co-Chairs:

Mark E. Law; 216 Larsen Hall; Dept. of ECE, University of Florida; Gainesville, FL 32611-6200 USA law@tec.ufl.edu

Kevin S. Jones; 100-B Rhines; Dept. of MSE, University of Florida; Gainesville, FL 32611-6400 USA kjones@eng.ufl.edu

Publications Chair:

Joseph Kopanski; National Institute of Standards and Technology; 100 Bureau Dr., stop 8121; Bldg. 225, Rm. A305, Gaithersburg, MD 20899 USA joseph.kopanski@nist.gov                         

European Chair:

Erik Collart; Applied Materials Inc.; West Sussex, United Kingdom, Eric_Collart@amat.com

Asian Chair:

Bunji Mizuno, UJTlab/UJTInc., Osaka/Nara/Yokohama, Japan, mizuno@ujtlab.com

 

AVS Contact:

Additional information about preparations for USJ-2005 can be obtained from Della Miller (Della@avs.org)