G.H. Buh, Samsung Electronics Co., “Quantitative analysis of ultra-shallow junction of sub 50 nm gate-length transistors:  junction, depth, sheet resistance, short channel effect, and transistor performance”

E.J.H. Collart, Applied Materials, “Co-implantation with conventional spike anneal solutions for 45 nm ultra-shallow junction formation”

Han-Joachim L. Gossmann, Axcelis Technologies, “Influence of Extension Implant Energy Purity and Angle on the Electrical Characteristics of a 65nm Device Technology”

Kapil Dev, University of Illinois, “Controlling Dopant Diffusion ad Activation through Surface Chemistry”

John Foggiato, WaferMasters Inc., “Implementation of Flash Technology for Ultra Shallow Junction Formation:  Challenges in Process Integration”

Houda Graoui, Applied Materials, “Source and drain extension formation using carbon co-implantation for PMOS devices”

Steve Walther, Varian Semiconductor Equipment Associates, “Effect of plasma chemistry and sheath conditions on near surface boron implant profiles”

Enrico Napolitani, MATIS – INFM, “Experiments on Room Temperature Diffusion of Boron in c-Si”

Temel Buyuklimanli, Evans East, “Near syrface SIMS analyses of plasma based B ion implants in Si”

Philip Merrill, Evans Northeast, “Choosing the appropriate SIMS conditions for measuring boron distributions in silicon”

Tom Janssens, IMEC, “Dopant profiling in NixSi1-x gates with SIMS”

Trudo Clarysse, IMEC, “Active dopant characterization methodology for Germanium”