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Tuesday Morning – Dopant /
Defect Interactions June 7, 2005 |
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8:00-8:30 |
Invited - Hal Kennel (Intel) |
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8:30-8:50 |
Robert Crosby, University of
Florida, “Observation of TED of Boron in SiGe and Correlation with
Extended Defects”
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8:50-9:10 |
Wilfried Vandervorst, IMEC,
“Ge- migration in s-Si-SiGe-structures during implantation and
annealing”
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9:30-9:50 |
Coffee Break and Exhibits
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9:50-10:10 |
Justin Hamilton, University of
Surrey, “The effect of buried Si/SIO2 interface on dopant and defect
evolution in PAI USJ”
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10:10-10:30 |
M.Y.L. Jung, University of
Illinois, “Measurement of Optically Enhanced Self-Diffusion in
Silicon”
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M.Y.L. Jung, University of
Illinois, “Measurement of Optically Enhanced Self-Diffusion in
Silicon”
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10:50-11:10 |
Giorgia M. Lopez, University
of Cagliari, “Fluorine in Si: native-defect complexes and the
suppression of impurity diffusion”
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11:10-11:30 |
S. Paul, Mattson Thermal
Products, “Effect of Flourine on the Activation and Diffusion
Behaviour of Implanted Preamorphized Silicon”
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11:30-2:00 |
Tuesday Lunch and Beach Break |
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Tuesday Afternoon –
Modeling Dopant / Defects June 7, 2005 |
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2:00-2:30 |
Invited - Lordes Pelaz
(U. Vallodalid), “Atomistic modeling of junction formation in
silicon” |
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2:30-2:50 |
Chihak Ahn,
University of Washington, “First principles calculations of dopant
solubility based on strain compensation and direct binding between
dopants and group IV impurities”
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2:50-3:10 |
Scott Dunham,
University of Washington, “Calculations of effect of anisotropic
stress/strain on dopant diffusion in silicon under equilibrium and
nonequilibrium conditions” |
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3:10-3:30
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Srini
Chakravarthi, Texas Instruments, “Dopant Diffusion Modeling for
Strained Si/SiGe Devices”
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3:30-3:50 |
F. Giannazzo,
“Size effects on the electrical activation of low-energy implanted B
in Si”
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3:50-4:10 |
Coffee Break and Exhibits |
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4:10-4:30
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Nick Cowern,
University of Surrey, “Computational modeling of co-implanted carbon
for 65 nm node USJ formation”
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4:30-4:50 |
Robert R.
Robison, University of Florida, “Simulation of boron-fluorine
co-diffusion behavior"
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4:50-5:10 |
S. Gennaro,
ITC-irst, Centro per la Riecerca Scientifica e Technologica, “Non
conventional annealing on shallow implants in silicon”
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5:10-5:30 |
Samer Rizk,
McMaster University, “Modeling the suppression of Boron diffusion in
Si/SiGe due to carbon incorporation”
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