Ultra Shallow Junctions 2005 (USJ-2005)

8th International Workshop on the Fabrication, Characterization and Modeling
of Ultra Shallow Junctions  in Semiconductors

June 5-8, 2005
Plaza Resort  & Spa
Daytona Beach, Florida, USA
 Program also viewable/downloadable in Adobe pdf format

Conference Sponsors

 

Applied Quantum® X

CAMECA's Shallow Probe LEXFAB-300

Evans Analytical Services

Overview

Mon. Sessions

Tues. Sessions

Wed. Sessions

Exhibits

 Manuscripts

Registration

 

Monday, June 6, 2005

 

Monday Morning - Plenary Session, June 6, 2005
7:30-9:00

Registration
8:45-9:00 Welcome and Opening Remarks
9:00-9:30 Invited - Rich Lindsay, Infineon Technologies, “Bridging RTA and sub-melt laser annealing for 45 nm CMOS”
9:30-10:00 Invited -Takashi Kuroi, Renesas Technology Corp., “Ultra-shallow Junction Formation for 45nm node and beyond”
10:00-10:30

Coffee Break and Exhibits
10:30-11:00 Invited - Jeffrey C. Gelpey, Mattson Technology Canada, Inc., "Advanced USJ Formation using FRTP"
11:00-11:30
Invited - Steve Walther, Varian Semiconductor Equipment Associates, “Development of plasma-based implant for silicon devices”

11:30-2:00

Monday Lunch and Beach Break

Monday Afternoon - Characterization I, June 6, 2005
2:00-2:30 Invited -Tom Kelly (Imago Scientific Instruments, Corp.), “Three-Dimensional Mapping of Dopants in Ultra-Shallow Junctions with a Local Electrode Atom Probe”
2:30-2:50

J. S. Moore, University of Florida, “Developing Local Electrode Atom Probe as a Method of Profiling Dopants in Silicon”

2:50-3:10

Jeffrey McMurray, IBM Microelectronics, “Scanning Capacitance Microscopy Evaluation of Junction Position in Vertical Dynamic Random Access Memory”
3:10-3:30

F. Giannazzo, “Scanning capacitance microscopy:  quantitative profiling down to nanostructures”
3:30-3:50

Trudo Clarysse, IMEC, “Towards non-destructive carrier depth profiling”
3:50-4:10 Coffee Break and Exhibits
4:10-4:30

Fabian Dortu, IMEC, “Extracting active dopant profile information from Carrier Illumination power curves”
4:30-4:50

Pierre Eyben, IMEC, “Characterization and optimization of a 65 nm CMOS technology using scanning spreading resistance microscopy”
4:50-5:10

Vladimir Faifer, Frontier Semiconductor,
“Non-contact sheet resistance and leakage current mapping for USJ”
5:10-5:30 Rapid Optimization of Millisecond Anneal Processes Using Carrier Illumination, E. Budiarto, A. Mayur, V. Parihar, and P. Borden, Applied Materials, Inc.
6:30-9:00

Reception / Dinner / Poster Session / Exhibits

Monday Evening - Poster Session, June 6, 2005
Poster    M.H. Yang, Charles Evans & Associates, “Ultra shallow Profiling Using SIMS: Estimating Junction Depth Error using Mathematical Deconvolution”
Poster    T. Janssens, IMEC, “SB implantation in Ge:  dramatic radiation induced damage”
Poster    J. Borland, J.O.B. Technologies, “Ultra Low Energy (ULE) Implant Dose & Activation Monitoring”
Poster    G.H. Buh, Samsung Electronics Co., “Dopant Loss of Ultra-shallow Junction by Wet Chemical Cleaning”
Poster    K-J. Chao, Charles Evans & Associates, “The unique application of AFM/SCM-2D-Carrier profiling through thick insulating layers”
Poster    J.T.C. Chen, Four Dimensions Inc., “Using Mercury Probes to Characterize USJ Layer”
Poster    F. Dortu, IMEC, “Progress in the physical modeling of Carrier Illumination”
Poster    P. Eyben, IMEC, “Impact of surface preparation on the electrical characteristics of scanning spreading resistance microscopy”
Poster    R.J. Hillard, Solid State Measurements, Inc., “Determination of Electrically Active Surface Dopant Density in Ultra-Shallow Junction (USJ) Structures with a Non-Destructive Elastic Material Probe (EM-Probe)”
Poster    K. Kimura, Kyoto University, “Two-dimensional carrier profiling on operating Si-MOSFET by scanning capacitance force microscopy and SCM”
Poster    W. Nieveen, Charles Evans & Associates, “Dose and Oxide Thickness Determination by XPS of
Plasma-Implanted P in Si”
Poster    M. Nishizawa, National Institute of Advanced Industrial Science and Technology, Japan, STM detection of individual dopant atoms on wet-prepared Si (111):H surfaces”
Poster    S.E. Park, NIST, “Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures”
Poster    R. Camillo-Castillo, University of Florida, “Effect of varying the initial conditions prior to flash-assist rapid thermal processing on defect populations and diffusion”
Poster    G. Impellizzeri, MATIS – INFM, “Fluorine incorporation in preamorphized Si”
Poster    C.R. Olson, University of Florida, “The Effect of Stress on the Evolution of Mask-Edge Defects in Ion Implanted Silicon”

Poster    M. Phen, University of Florida, “The Effect of Stress on Solid Phase Recrystallization of Ion Implanted Si”
Poster    A. Satta, “P implantation doping of Ge:  diffusion, activation, re-crystallization”
Poster    J-H. Lee, Sangnyung University, “BF2 Dose Loss Phenomena in p_MOSFET’s”
Poster    L. Radic, University of Florida, “Modeling of B diffusion in the presence of Ge”
Poster    H.Y. Chan, Dept. of Chemical and Biomolecular Engineering, National University of Singapore, “Application of Molecular Dynamics for Low Energy Ion Implantation in Crystalline Silicon”
Poster    R. Gwilliam, University of Surrey, shallow junction formation and dopant activation study of Ga implanted Si”

Poster    D. Zeenberg, University of Florida, “Effect of Non-Melt Laser Annealing on Pre-Amorphized Silicon”
Poster    J. Borland, J.O.B. Technologies, “Applying Implantation Equivalent Scaling to Gate Length Scaling Beyond the 90 nm Node”