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P.
Bhattacharya,
University of Michigan, High-temperature spin polarized lasers with
tunnel spin injectors
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J. Chakhalian,
University of Arkansas, Orbital reconstruction and covalent bonding
at an oxide interface
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M. S. Dresselhaus,
Massachusetts Institute of Technology, The importance of edges in
nanotubes and graphene
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P. Feibelman,
Sandia National Laboratory, Why a regular Ir cluster array forms on
graphene on Ir(111)
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F. Flores,
Universidad Autónoma de Madrid, Dipoles and band alignment at organic
materials interfaces
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M. Fuhrer,
University of Maryland, Intrinsic and Extrinsic Limits of Charge
Carrier Mobility in Graphene
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P.C
Hammel,
The Ohio State University, 3D scanned probe magnetic resonance
imaging for high resolution studies of materials
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A.
Hitchcock,
McMaster
University,
Soft X-ray spectromicroscopy of biomolecules at polymer surfaces
-
S.-W. Hla,
Ohio University, STM surface characterization and manipulation
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B. Jonker,
Naval Research Laboratory, Spin currents in silicon: injection,
modulation and electrical detection
-
T. Kikkawa,
Fujitsu Laboratories Ltd., High reliability AlGaN/GaN FETs
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R.
Latour,
Clemson University, Understanding protein-surface interactions at
the atomic level through molecular simulation
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G. Lucovsky,
North Carolina State
University,
Metal oxides on Ge
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T. P. Ma,
Yale University, CMOS transistors with GaAs, InAs, and InGaAs
channels and high-k gate stacks
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G. Malliaras,
Cornell University, Charge injection and transport in conjugated
polymers
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C. Murray,
University of Pennsylvania, Nanocyrstals, nanocrystal assemblies, and
their properties
-
T. Nagao,
National Institute for Materials Science (NIMS), Atom-scale and
mesoscale metallic structures for infrared plasmonics
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M. Olmstead,
University of Washington, Heteroepitaxial growth and electronic
structure of Mn:Ga2Se3 thin films on Si(100):As:
Exploration of a candidate dilute magnetic semiconductor
-
T.-Y. Seong,
Korea University, Contact problems on III-Nitrides
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W. Stolz,
Philips University Marburg,
Monolithic integration of III-V laser with Si-CMOS
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A. Talin,
Sandia Livermore Laboratories, Barrier formation and transport in
metal contacts to nanowires
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S. Tsukamoto,
The Anan
National College of Technology, In-situ STM studies on
III-V surfaces during MBE Growth
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K. Uchida,
Tokyo Institute of Technology, Physics and engineering of strain
effects on Si MOS inversion layer mobility
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A.
Yacoby,
Harvard University,
Electron-hole puddles in graphene Iimaged using a scanning single
electron transistor
