You are invited to participate in the USJ-2007 Workshop to be held May 6-9 2007, at the Embassy Suites, Napa, California. This is the ninth workshop in the successful series of USJ-workshops providing an open forum for discussions on ultra-shallow junction formation and their one- and two-dimensional characterization, primarily in silicon devices. Previous workshops attracted device designers, equipment manufacturers, characterization, modeling and TCAD Engineers, who reviewed the current and future needs for shallow junctions, manufacturing tool capabilities as well as advancements of the analytical characterization techniques for USJ. Extensive, full reviewed papers have been published as proceedings in the AVS Journal of Vacuum Science & Technology B.  

With the introduction of complex gate stacks, workfunction engineering, high–k dielectrics, strain engineering, new channel and substrate materials (Ge, III-V),  and 3D-dimensional structures (FINFET’s), USJ-fabrication and characterization can no longer be considered as an independent processing module and the topics discussed in the USJ-workshops become intimately linked to the complete semiconductor device fabrication. This requires that the metrology and modeling challenges and solutions should not only be pursued for USJ applications but equally well address the needs for the complete device structure. In order to provide a dedicated forum to discuss these problems in detail, the scope of the workshop has been broadened from a focus solely on USJ (fabrication and metrology) to a wider field addressing metrology related to all device related issues of advanced technologies.  

In order to highlight this extended focus the workshop is therefore renamed the:

“International Workshop on INSIGHT in
Semiconductor Device Fabrication,
Metrology and Modeling (INSIGHT-2007)