ICMI'06 will continue the mission of the previous six annual ICMI conferences: to provide a unique opportunity for industrial, government, and academic scientists and engineers working in the areas of microelectronic devices, processing, and process integration to gather and exchange ideas regarding the challenges of nanodevice fabrication.
Conference Format: There will be one oral track each day consisting of keynote and invited talks with contributed talks to round out each session. Daily poster sessions will cover all oral session and related topics and provide ample opportunity for participant interaction.
Proceedings Publication: Authors presenting at ICMI’06 have the option of publishing manuscripts of their presentations in JVST B. Papers will be reviewed under the same strict guidelines as any manuscript submitted to JVST B. Manuscripts will be collected at the conference and will be grouped together in one issue of the journal.
SESSION SUMMARIES & INVITED SPEAKERS
Designs and Materials for Alternative Charge or Magnetic Moment-Based Devices
Papers in any area of alternative charge transfer devices, including molecular electronics, spintronics, devices using ballistic carrier transport, devices based on quantum effects, magnetoresistive random access memory, and single electron transistors. may be submitted to this session.
Stress Engineering in Transistor Channels and Thin Films
This session will combine theoretical, processing, and device papers on all stress and orientation-engineering topics (including strained epilayers on Si, high-mobility materials, and heterogeneous integration by wafer bonding), plus general issues of stress and mechanical properties in microelectronics. We also encourage submissions on strain measurement.
Gate Stack and Junction Engineering
This session addresses progress in planar transistor performance employing new materials and doping schemes. Of particular interest are contributions concerning (a) understanding of materials and interface properties that affect device functionality; (b) processing and integration schemes and their impact on stack/junction properties; (c) device performance using new materials/junctions.
Contact and Interconnect Stack EngineeringThis session addresses issues related to contact and interconnect stack engineering for scaled CMOS as well as alternative device structures. We encourage submission of abstracts on topics including, but not limited to, salicides/silicides, interconnect integration, hybrid and homogenous BEOL dielectric stacks, metrology for BEOL fabrication, and nano-tubes.
Patterning and Characterization of Films & Interfaces
SHORT COURSE INFORMATION
The AVS short courses will be held on March 6-10, 2006, in conjunction with the 7th International Conference on Microelectronics and Interfaces (ICMI'06). The short course program consists of 6 courses that provide practical training in:
course lengths vary from one day to five days beginning at 8:30 a.m.
and finishing at 4:30 p.m. daily, with a 1 hour lunch break. Course
levels vary from introductory to advanced, some courses provide
specific training for technicians, scientists, and engineers who
intend to use the technology every day; other courses are geared
toward providing overviews for supervisors, managers, and novices in
these fields. The following program overview is organized under the
three technical categories and should help you decide which courses
are right for you.