The AVS Topical Conference on Atomic Layer Deposition (ALD 2007)
will be a three-day meeting (preceded by one day of tutorials),
dedicated to the science and technology of atomic layer controlled
deposition of thin films. It will be held in the Kona Kai
Resort, San Diego, on June 24-27, 2007. This conference is sponsored
by the AVS Thin Film Division.
Atomic layer deposition (ALD) is used to fabricate ultrathin and conformal
thin film structures for many semiconductor and thin film device
applications. A unique attribute of ALD is that it uses sequential
self-limiting surface reactions to achieve control of film growth in the
monolayer or sub-monolayer thickness regime. ALD is receiving
attention for its potential applications in advanced high dielectric
constant (high-k) gate oxides, storage capacitor dielectrics and copper
diffusion barriers in advanced electronic devices, as well as for solar
energy and biological applications. It is of interest for any advanced
technologies that require control of film structure in the nanometer or
sub-nanometer scale.
As in past conferences, the presentations will follow an all-electronic
format, and electronic copies of the presentations (including oral
component, and questions and answers) will be made available in the form of
copy-secured CD-ROM's.
- ALD Precursors
and Precursor Design
- Precursor
Delivery Systems
- Simulation,
Modeling, and Theory
- ALD Surface
Chemistry
- Surface
Preparation for ALD
- Initiation of
ALD Growth
- Patterned and
Selective Area ALD
- In-situ
Monitoring and Analysis
- Radical and
Other Energy-Enhanced ALD Methods
- Manufacturing
Tools for ALD
- Applications
of ALD to Microelectronics
- ALD for MEMS,
Catalytic, Photovoltaic, Optical, and Magnetic Materials
Characterization of ALD Coatings
- Applications
of ALD to Nanotechnology
-
Characterization of ALD Coatings
- Nano-laminate
Materials
-
Multi-component Materials
- Highly
Conformal ALD Processes
- ALD on Novel
substrates
- Devices Formed
Using ALD Materials
- Novel
Applications of ALD
- Reliability of
ALD Materials
Partial List of Invited Speakers
o
Opportunities
and Challenges of ALD for CMOS Devices in 45-nm Generation and
Beyond,
T. Ando,
IBM-Sony
o
Atomic Layer Deposition as an Enabling Technology for Fabrication of
Germanium MOS Transistors,
G. Eneman,
IMEC, A. Delabie, B. De Jaeger, G. Nicholas, K. Martens, D. Brunco,
P. Zimmermann, B. Kaczer, F. Leys, G. Winderickx, C. Huyghebaert, V.
Terzieva, R. Loo, M. Caymax, M. Meuris
o
Towards Atomic Scale Process Simulation of Atomic Layer Deposition
of High-k Materials: a Multi-scale Approach,
Alain Esteve,
CNRS
o
Conformal Encapsulation of Particles by ALD in a Fluidized Bed
Reactor,
J.D. Ferguson,
ALD NanoSolutions, Inc.
o
ALD of perovskite oxide and
elecrode thin films for memory device applications,
S.W. Lee, J.H. Hahn, C.S. Hwang, SNU
o
Development of precursors for the ALD of high-k dielectric oxides,
A.C. Jones,
Univ. of Liverpool, J.M. Gaskell, H.C. Aspinall, P.R. Chalker, R.
Odedra, P.N. Heys
o
Maximizing the opportunities of atomic layer deposition: Metallic
nanostructure fabrication and in situ nitrogen depth profiling for
high k, Hyungjun Kim,
POSTECH
o
ALD
of Some Metal Oxides Using Metal Alkoxide Precursors,
W. Cho, K.-S. An, T.-M.
Chung, C.G. Kim, S.K. Park,
N.-S. Lee, Y. Kim,
Korea University
o
ALD and Biology - Advantages and Disadvantages,
M. Knez,
Max Planck Institute, L. Zhang, S.-M. Lee, A. Patil, S. Mann, K.
Nielsch, U. Gφsele
o
Quantum Molecular Dynamics Simulations of ALD,
C Musgrave,
Stanford
Univ., A. Mukhopadhyay, J.
Javier Sanz
o
Organic - inorganic hybrid materials by atomic layer deposition,
O. Nilsen,
Univ. of Oslo, K.B. Klepper, H.Ψ. Nielsen, H. Fjellvεg
o
ZnO
for TFTs,
Sang-Hee Ko Park,
ETRI
o
Infrared Studies of ALD and CVD Processes,
M. Pemble,
Tyndall National Institute in
Ireland
o
Selection, Manufacturing, Packaging and Delivery Considerations of
ALD Thin Film Precursors for Commercial Applications,
D.A. Roberts,
Air Products, T.R. Gaffney
o
Application of ALD Process to DRAM Devices,
J-S. Roh,
Hynix Semiconductor, Inc., D-S. Kil, J-H.
Kim, K-Y. Park, Y-D.
Kim, K-W. Do, S-J. Yeom, N-J.
Kwak, J-W. Kim
o
Growth and properties of oxides deposited by ALD using ozone as
oxygen source,
G. Scarel,
CNR-INFM MDM National Laboratory,
C. Wiemer, S. Spiga, M. Perego, H. Lu, S. Baldovino, M. Fanciulli
o
Production-Ready ALD toolset using HfCl4 derived HfO2 gate
dielectric for CMOS,E.
Shero, ASM America
o
Manipulation of Band Structure in Two- and
Three-Dimensional Photonic Crystals by Atomic Layer Deposition,
C. Summers,
Georgia Tech
o
New
Fabrication Methods of Nanostructural Materials by Using Atomic
Layer Deposition,
M.M. Sung,
Hanyang Univ.
o
ALD
High-k and Metal Gate: CMOS Solutions and Future Challenges,
D. Triyoso,
Freescale Semiconductor, R.I Hegde, W.J Taylor Jr, R. Gregory, X.-D.
Wang, J.K. Schaeffer, S. Filipiak, D. Gilmer
o
High-Performance III-V MOSFETs Enabled by Atomic Layer Deposition,
P.D. Ye, Purdue
Univ.
