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AVS Information

Tutorial Speakers & Topics
The Tutorial will be held after noon on Sunday, June 28, 2015 at the Portland Hilton.
Topic details will be posted in April 2015.
The registration fee will include breaks and course materials.

http://www2.avs.org/conferences/ALD/2015/generic/arrow_red.gif ALD 2015 Registration

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Schedule

11:30 a.m.- 12:30 p.m.

Registration

   

12:30p.m.- 1:15 p.m.

Patricio E Romero, Intel, “Early stage ALD and CVD precursor development at Intel”

   

1:15 p.m.- 2:00 p.m.

Markku Leskelä, University of Helsinki, Finland, “ALD Process Development: Solutions to Industrial Challenges”

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2:00 p.m.- 2:15 p.m.

Break

   

2:15 p.m.- 3:00 p.m.

Ravi Kanjolia, SAFC Hitech, "Lab to Fab: Precursor Development for Semiconductor Applications" 

   

3:00 p.m.- 3:45 p.m.

HanJin Lim, Samsung Electronics, “ALD Technologies and Applications in Semiconductor Device Fabrication”

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3:45 p.m.- 4:30 p.m.

Theodorus Standaert, IBM, “Challenges in BEOL Technology and Opportunities for ALD Processing" 

   

4:30 p.m.- 4:45 p.m.

Break

   

4:45 p.m.- 5:30 p.m.

Peide D. Ye, Purdue University, “ALD for Novel Device Technologies”

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Instructors

  • Patricio E Romero, Intel, “Early stage ALD and CVD precursor development at Intel”

    Abstract:
    The continuing success and innovation of the semiconductor industry has relied on persistent miniaturization, especially in the last two decades where this has reached the nanometer scale. Moore’s Law, which holds that the number of transistors on microchips double about every 2 years, has been the guiding principle of the industry. This continued downsizing has produced smaller, faster and cheaper devices leading to an unprecedented increase in microprocessor performance and the rise of mobile computing. This miniaturization however, has also pushed the limits of conventional materials in microchips, as their dimensions shrunk to the atomic level in some cases. As a result, over the past years the number of new materials in semiconductor processing has grown rapidly. At the same time, due to the limitations associated with traditional “top-down” patterning techniques, new “bottom-up” architectural growth approaches become highly desirable. This has opened a great deal of opportunities for synthetic organometallic/inorganic chemistry to design new molecules and methods which could enable new materials of defined function. In this presentation, some of these challenges will be discussed with a focus on early stage development of functional CVD and ALD precursors aimed to elucidate these issues.

 

  • Markku Leskelä, University of Helsinki, Finland, “ALD Process Development: Solutions to Industrial Challenges”

    Abstract:
    The need of high-k oxide films in MOSFETs and DRAMs triggered the ALD research boom in late 1990s. That time it was obvious that thin conformal films are needed and ALD is the only viable technique to fulfill this need. After an extensive search the materials selected were HfOx for transistors and ZrO2 for DRAMs. Especially in the case of ZrO2 not only the thin film material but the process (precursors) plays an important role to achieve the desired crystalline phase in the film. Simultaneously with the high-k studies the other needs of thin conformal in microelectronics such as barriers and metals were addressed in the ALD research. Especially processes were developed for nitrides (TiN, TaN), carbides and metals. Metal ALD has been challenging because of lack of suitable chemistry and nucleation problems. The development of processes for platinum group metals was a success but need for good industrial processes for many other metals still exists. Metal sulfides are old ALD materials and in industrial use in electroluminescent display production but ALD of selenides and tellurides has been much less studied. The need of chalcogenides in phase change materials and development of alkyl silyl precursors for selenium and tellurium has improved the situation. There are still needs to develop new ALD processes for microelectronics, low-k materials, 2D materials and oxides for transparent TFTs can be mentioned as examples.

    Besides applications in microelectronics there are many emerging areas where ALD has been introduced. One important area is energy technology materials. ALD films are used in silicon solar cells as passivation layers and they are extensively studied in many other areas such as dye sensitized solar cells, lithium ion batteries, supercapacitors and fuel cells. Indicative for these and many other applications is the use of known – mostly oxide –processes for protection. Li ion batteries make an exception and new materials and processes have been developed for lithium compounds.

    In the presentation the process development in all the materials mentioned.

 

  • Ravi Kanjolia, SAFC Hitech, "Lab to Fab: Precursor Development for Semiconductor Applications"

    The material innovation has taken a central role in achieving the performance targets of the silicon semiconductor logic and memory devices. As the technology evolves from 22 nm devices to lower nodes (<10 nm), the thin film fab deposition processes are demanding novel ALD/CVD precursors that can deliver superior films with angstrom level thicknesses. This talk would span across the innovation and development cycles of the precursors including precursor design, development, scale up, gas phase delivery and flux stability. Specific examples would illustrate the process of taking a precursor from R&D phase to High Volume Manufacturing.

 

  • HanJin Lim, Samsung Electronics, “ALD Technologies and Applications in Semiconductor Device Fabrication”

    Abstract:
    As semiconductor devices of both memory and logic have been smaller than 20nm feature size and beyond, it is most important to acquire the conformal high-quality thin films that effect on the electrical performance enhancement in the three dimensional patterned scheme. ALD technology has been required in such critical steps as transistor and capacitor and also increased its applications including DPT (double patterning technology).
    This talk consists of two parts. The first part covers the ALD in general. Those introduce the general ALD technologies including processes, precursors, reactants and equipment. The second part deals with its applications in semiconductor device fabrication. Major applications include oxide for transistor gate and DPT pattrening, nitide for transistor spacer, high-k dielectrics for transistor as well as capacitor, and metal electrode.


     
  • Theodorus Standaert, IBM, “Challenges in BEOL Technology and Opportunities for ALD Processing"

    Abstract:
    Challenges in BEOL Technology and Opportunities for ALD Processing
    The semiconductor industry has faithfully abided by Moore’s law and every two years the transistor density has doubled. Equally impressive is the amount of research and innovation that has enabled this scaling including the interconnect technology defining the Back End of Line (BEOL). The major challenges facing BEOL today are in patterning, control of electrical parasitics and reliability. This presentation will review the challenges each of these areas and show where Atomic Layer Deposition (ALD) has or can play a critical role to continue the interconnect scaling for future nodes to come.

 

  • Peide D. Ye, Purdue University, “ALD for Novel Device Technologies”

    Abstract:
    ALD as a modern thin film technology finds its wide applications. In this talk, I use the state-of-the-art nanoelectronics research as an example showing its critical roles. By ALD epitaxial oxide, the first GaAs CMOS circuits were demonstrated after 50 years III-V MOS research. ALD high-k dielectric on InGaAs and Ge makes the high-mobility channel materials formally written in ITRS in 2011 and has a great chance to replace Si beyond 10 nm node in main stream microelectronics. ALD also finds its unique and interesting applications as dielectric and passivations on 2D materials such as MoS2 and phosphorene which we are heavily investigating for transistor technology.

 

Following the ALD 2015 Conference on July 1-2, 2015, the Atomic Layer Etching Workshop will be held at the Portland Hilton Click Here for Details

 

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