Scope
The AVS Topical Conference on Atomic Layer Deposition (ALD 2011) will be a three-day meeting (preceded by one day of tutorials), dedicated to the science and technology of atomic layer controlled deposition of thin films. Atomic layer deposition (ALD) is used to fabricate ultrathin and conformal thin film structures for many semiconductor and thin film device applications. A unique attribute of ALD is that it uses sequential self-limiting surface reactions to achieve control of film growth in the monolayer or sub-monolayer thickness regime. ALD is receiving attention for its potential applications from advanced electronics, microsystems, and displays to energy capture and storage, solid state lighting, biotechnology, security, and consumer products - particularly for any advanced technologies that require control of film structure in the nanometer or sub-nanometer scale.

ALD 2011 will feature a special focus on Industrialization of ALD, comprising a parallel track of sessions devoted to the technical and strategic challenges involved in moving ALD into products and competitive manufacturing across a wide variety of applications. ALD's unique capabilities promote tremendous diversity in potential applications with value for specialized, custom applications as well as mass manufacturing. Abstract submissions are encouraged in areas such as ALD manufacturability, equipment design, modeling and simulation, sensing and advanced process control, high throughput strategies, and emerging ALD applications to supplement a group of invited talks in these sessions.

As in past conferences, the presentations will follow an all-electronic format, and electronic copies of the presentations (including oral component, and questions and answers) will be made available in the form of copy-secured DVDs.

 

Sponsor/Exhibit Form (PDF)

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• Key issues in ALD manufacturability
• Equipment designs and considerations
• Sensing and advanced process control
• Reactor and throughput modeling
• Large format, roll to roll, and fast ALD
• ALD process integration
• Major application opportunities
   

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Invited Speakers

• Parag Banerjee, University of Maryland

• Johann  Bartha, TU Dresden

• David Cameron, Lappeenranta University of Technology, Finland

• Miin-Jang Chen, National Taiwan University

• Christophe Detavernier, Ghent University, Belgium

• Eric Dickey, Lotus Applied Technology

• Anne Dillon, National Renewable Energy Laboratory

• Simon Elliott, Tyndall National Institute, Cork, Ireland

• Cheol Seong Hwang, Seoul National University, South Korea

• Vladimir Kuznetsov, Levitech

• Ki Hoon Lee, IPS

• David Levy, Kodak

• Martyn Pemble, Tyndall National Institute, Cork, Ireland

• Paul Poodt, TNO/Eindhoven, Netherlands

• Fritz Prinz, Stanford University

• Fred Roozeboom, TNO, Eindhoven and TU Eindhoven, The Netherlands

• Ganesh Sundaram, Cambridge Nanotech

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Student Award for best presentation of graduate research in Atomic Layer Deposition 

The Student Award has been established to recognize outstanding research performed by a graduate student in areas of interest to Atomic Layer Deposition.  Three finalists will be selected on the basis of abstract submission, and will each receive a $500 award upon attending the ALD International Symposium and presenting their paper in an oral session. The Best Student Paper Award winner will be selected on the basis of the oral presentation, considering quality of research and clarity of presentation. The award consists of a $500 cash prize and certificate. Interested applicants should submit an abstract to the ALD technical program according to the regular ALD Conference guidelines.

 In addition, a copy of the ALD abstract and a letter of recommendation from the advisor should be sent before April 30, 2011 to the Conference Chairs: Jill Becker Cambridge NanoTech, jbecker@cambridgenanotech.com and Gary Rubloff, University of Maryland rubloff@umd.edu.

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Conference Chairs
Jill Becker
Cambridge NanoTech
jbecker@cambridgenanotech.com

Technical Program Committee 2011

• Annelies Delabie (IMEC

• Christian Dussarrat (Air Liquide)

• Jeffrey W. Elam (Argonne National Lab.)

• Ravi Kanjolia (SAFC Group)

• W.M.M. Kessels (Eindhoven Univ. of Technology)

• Mato Knez (Max Planck Institute)

• Sang-In Lee (SYNOS Techonology)

• Ana Londergan (Qualcomm)

• Kornelius Nielsch (University of Hamburg )

• Gregory Parsons (North Carolina State University)

• Martyn Pemble (Tyndall National Institute)

• Nicola Pinna (University of Aveiro)

• Mikko Ritala (University of Helsinki)

• Uwe Schroeder (NaMLab)

• Ganesh Sundaram (Cambridge NanoTech)

• Peter Ye (Purdue University) 

 International Advisory Committee 2011

• Jill Becker (Cambridge NanoTech)

• Steven George (University of Colorado at Boulder)

• Roy Gordon (Harvard University)

• Cheol Seong Hwang (Seoul National University)

• Hyeongtag Jeon (Hanyang University, South Korea)

• Mato Knez (Max Planck Institute)

• Brendan McDougall (Applied Materials) 

• Fritz B. Prinz (Stanford University)

• Sasangan Ramanathan (Aixtron, Inc)

• Shi-woo Rhee (POSTECH) 

• Steve Rossnagel (IBM T.J.Watson Research Center)

• Gary Rubloff (University of Maryland)

• Uwe Schroeder (NaMLab)

• Robert Wallace (UT Dallas)

• Glen Wilk (ASM)

• Chayoung Yoo (Samsung Electronics)